The NXP BF982 is a high-performance silicon MOS dual-gate field-effect transistor that is designed for use in a variety of RF applications. This device is particularly well-suited for applications requiring low noise figures and high input impedance at VHF, UHF, and microwave frequencies.
Key Features
- Frequency Range: The BF982 operates effectively across a broad range of frequencies, making it a versatile component for RF amplifiers and mixers.
- Dual-Gate MOSFET: With its dual-gate configuration, the BF982 provides excellent linearity and gain control, which is essential for high-quality signal amplification.
- Low Noise Figure: The low intrinsic noise of the BF982 makes it ideal for use in receiver front-ends where minimizing signal distortion is critical.
- High Gain: This transistor offers high forward transfer admittance, which translates to significant amplification in RF circuits.
- High Input Impedance: The high input impedance feature ensures minimal loading of the preceding circuit, preserving signal integrity.
Applications
The NXP BF982 is suited for a variety of applications, including:
- VHF/UHF amplifiers
- RF mixers
- Oscillators
- Low-noise amplifiers for TV tuners and professional communications equipment
- High-performance RF circuit designs requiring precise signal control
Technical Specifications
| Parameter |
Value |
| Drain-Source Voltage (Vds) |
20 V |
| Gate-Source Voltage (Vgs) |
± 8 V |
| Drain Current (Id) |
30 mA |
| Power Dissipation (Pd) |
300 mW |
| Operating Temperature Range |
-55°C to +150°C |
With its robust features and flexible application potential, the NXP BF982 is a top choice for designers and engineers looking for a reliable and high-quality RF component.