The BC847AT/DG is a high-quality NPN bipolar junction transistor (BJT) from NXP Semiconductors, renowned for its reliability and performance in a wide range of electronic applications. This small-signal transistor is designed for general-purpose switching and amplification tasks, making it a versatile component for both commercial and industrial electronic circuits.

Key Features

• Transistor Type: NPN - This allows for efficient current amplification when a small base current is applied.
• Package: SOT-23 - A compact surface-mount package that is suitable for automated assembly processes and space-constrained applications.
• Maximum Collector-Emitter Voltage (Vceo): 45V - Provides a good margin for applications with moderate voltage requirements.
• Collector Current (Ic): 100mA - Capable of handling a continuous collector current up to 100mA, making it suitable for a range of light to medium power applications.
• Power Dissipation (Pd): 250mW - Adequate power dissipation for its size, allowing for stable operation under typical conditions.
• DC Current Gain (hFE): High - Ensures efficient current amplification with a high beta value, providing a robust response to input signals.
• Operating Temperature Range: -65°C to +150°C - Can operate effectively across a wide temperature range, ensuring reliability in various environments.

Applications

The BC847AT/DG transistor is suitable for a multitude of applications including, but not limited to:

• General-purpose switching
• Signal amplification
• Audio amplifiers
• Driver stages in hi-fi amplifiers and television circuits
• Low noise input stages of tape recorders and hi-fi equipment

Quality and Reliability

NXP Semiconductors is a trusted name in the industry, and the BC847AT/DG transistor is manufactured to meet high-quality standards. With its robust design and NXP's commitment to quality, this transistor is a reliable choice for designers and manufacturers seeking performance and longevity.