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AFT27S010NT1

Part No AFT27S010NT1
Manufacturer NXP / Nexperia
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF NCH 65V 2700MHZ PLD1.5W
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer NXP
Packaging Reel - TR
Status Active
Transistor Polarity LDMOS
Frequency 2.17GHz
Gain 21.7dB
Voltage - Test 28V
Current - Test 90mA
Power - Output 1.26W
Voltage Rating 65V
Case / Package PLD-1.5W-2
Win Source Part Number 1016286-AFT27S010NT1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian AFT27S010NT1 CAD Model

Description

The AFT27S010NT1 from NXP Semiconductors is a state-of-the-art RF power LDMOS transistor designed for a wide range of applications, including but not limited to, cellular infrastructure, broadcast, industrial, and RF energy markets. This high-performance transistor is part of NXP's Airfast series, which is renowned for its high efficiency, ruggedness, and reliability.

Key Features

  • Frequency Range: The AFT27S010NT1 operates at a frequency range of 728-768 MHz, making it suitable for various RF applications within this spectrum.
  • High Output Power: With an output power of 10 Watts, this LDMOS transistor ensures robust performance for high-power applications.
  • High Efficiency: The device offers high efficiency, which translates to better performance and reduced thermal challenges during operation.
  • Integrated ESD Protection: The AFT27S010NT1 comes with integrated ESD protection, safeguarding the device against electrostatic discharge and enhancing its durability.

Applications

The versatile nature of the AFT27S010NT1 makes it ideal for a variety of applications. It is particularly well-suited for use in:

  • Cellular base station amplifiers, specifically for LTE and 4G networks.
  • Industrial, scientific, and medical (ISM) applications where reliable RF power is crucial.
  • Broadcast transmitters for both audio and video signals.
  • RF energy applications, including plasma generation, heating, and drying processes.

Technical Specifications

The AFT27S010NT1 boasts impressive technical specifications that ensure its effectiveness in demanding environments:

  • Supply Voltage (Vdd): 28 Volts
  • Gain: High gain for efficient signal amplification.
  • Thermal Resistance: Low thermal resistance for improved heat dissipation.
  • Package: The device is housed in an over-molded plastic package, which provides additional protection and ease of mounting on various types of PCBs.

Quality and Reliability

NXP Semiconductors is committed to delivering high-quality and reliable products. The AFT27S010NT1 is no exception, undergoing rigorous testing and quality assurance processes to meet the industry's highest standards. This ensures that customers can confidently integrate this LDMOS transistor into their systems with the expectation of exceptional performance and longevity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $51.8181 $51.8181
3+ $42.5175 $127.5525
4+ $41.1888 $164.7552
6+ $39.8601 $239.1606
7+ $38.5315 $269.7205
9+ $34.5454 $310.9086
!
Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
Order Increment : 1 pcs
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