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Same model may have multiple batches, images only for reference.
BCP56HX Real Image
Same model may have multiple batches, images only for reference.

BCP56HX

Part No BCP56HX
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 1A SOT223 / Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz Surface Mount SOT-223
Datasheet
BCP56HX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Series Automotive, AEC-Q101
Package Tape & Reel
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V
Frequency - Transition 100MHz
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Package / Case TO-261-4, TO-261AA
Supplier Device Package SOT-223
Base Product Number BCP56
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names 1727-7618-1,1727-7618-2,BCP56HX-ND,934070289115,1727-7618-6
Standard Package 1,000
Win Source Part Number 1112271-BCP56HX
Ultra Librarian 3D Model Ultra Librarian BCP56HX CAD Model

Description

The BCP56HX is an NPN bipolar transistor from Nexperia USA Inc.

  • Maximum Collector Emitter Breakdown Voltage: 80V
  • Maximum Collector Current (Ic): 1A
  • DC Current Gain (hFE): 63 @ 150mA and 2V
  • Frequency Transition: 100MHz
  • Vce saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Maximum Collector Cutoff Current: 100nA (ICBO)
  • Package: TO-261-4, TO-261AA
  • Operating Temperature Range: 175°C (TJ)
  • Application: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single

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