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BC807-16QC-QZ

Part No BC807-16QC-QZ
Manufacturer Nexperia USA Inc.
Catalog Transistors (BJT) - Single
Description TRANS PNP 45V 0.5A DFN1412D-3 / Bipolar (BJT) Transistor PNP 45 V 500 mA 80MHz 380 mW Surface Mount, Wettable Flank DFN1412D-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Nexperia USA Inc.
Package Tape & Reel
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V
Power - Max 380 mW
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Other Names 1727-BC807-16QC-QZTR,1727-BC807-16QC-QZCT,1727-BC807-16QC-QZDKR,934662747147
Standard Package 5,000
Win Source Part Number 977130-BC807-16QC-QZ
Ultra Librarian 3D Model Ultra Librarian BC807-16QC-QZ CAD Model

Description

The BC807-16QC-QZ is a PNP bipolar transistor manufactured by Nexperia USA Inc.

  • Voltage Collector Emitter Breakdown: 45V
  • Maximum Collector Current: 500mA
  • Vce Saturation: 700mV @ 50mA, 500mA
  • Current Collector Cutoff: 100nA (ICBO)
  • DC Current Gain (hFE): 100 @ 100mA, 1V
  • Frequency Transition: 80MHz
  • Package/Case: 3-XDFN Exposed Pad
  • Supplier Device Package: DFN1412D-3

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