The 2SC5195-T1-A is an NPN triple diffused planar silicon transistor manufactured by NEC. It is designed for use in high-power audio amplifier applications and switching applications.

Applications

• High-power audio amplifiers
• Switching regulators
• DC-DC converters
• Motor control

Features

• High breakdown voltage (VCEO = 200V)
• Large collector current capability (IC = 15A)
• High power dissipation (PC = 150W)
• Low saturation voltage
• Excellent hFE linearity

Benefits

• Enables the design of high-power, high-fidelity audio amplifiers.
• Provides reliable switching performance in power supply circuits.
• Contributes to efficient power conversion in DC-DC converters.
• Allows for precise motor control.

Additional Details

The 2SC5195-T1-A is typically packaged in a TO-3P package. Key electrical characteristics include a collector-emitter breakdown voltage (VCEO) of 200V, a collector current (IC) of 15A, and a power dissipation (PC) of 150W. The DC current gain (hFE) is typically in the range of 50-100. The transistor is designed for operation at junction temperatures up to 150°C.

When using this transistor, it's important to consider appropriate heat sinking to manage the significant power dissipation. Proper biasing techniques are also crucial to ensure stable and linear operation, particularly in audio amplifier applications.