The 2SB247 is a PNP silicon transistor manufactured by NEC. This transistor is designed for use in low-frequency power amplifier applications.

Applications

• Low-frequency power amplifiers
• Switching circuits
• General-purpose amplification
• Audio amplification stages
• Voltage regulators

Features

• PNP Silicon Transistor
• Low saturation voltage
• High collector current capability
• High power dissipation
• Excellent linearity

Benefits

• Enables efficient power amplification in low-frequency circuits.
• Provides reliable switching performance due to its low saturation voltage.
• Suitable for applications requiring high current handling.
• Offers stable performance in various operating conditions.
• Contributes to high-quality audio reproduction in amplifier stages.

Additional Details

The 2SB247 is typically supplied in a TO-92 or similar through-hole package. Its key electrical characteristics include a collector-emitter voltage (VCEO) rating suitable for many low voltage amplifier designs, a continuous collector current (IC) rating that handles moderate current demands, and a power dissipation (PD) rating suitable for many amplifier circuits. The transistor’s current gain (hFE) enables it to efficiently amplify signals. Its low saturation voltage minimizes power loss and improves efficiency in switching applications. It is often used as a driver for larger transistors.