The 1SS123 is a small signal Schottky barrier diode manufactured by NEC. It is designed for high-speed switching and low forward voltage drop applications.

Applications:

• High-speed switching circuits
• Voltage clamping
• Rectification in high-frequency circuits
• Protection circuits
• Mixer and detector circuits

Features:

• Low forward voltage drop
• High-speed switching
• Small package size
• Low capacitance

Benefits:

• Enables efficient rectification and switching in high-frequency applications.
• Protects sensitive components from voltage spikes.
• Minimizes power loss due to its low forward voltage drop.
• Suitable for compact electronic devices.

Specifications:

Key specifications for the 1SS123 Schottky diode typically include:

• Maximum Repetitive Peak Reverse Voltage (VRRM): 30V
• Maximum Average Forward Current (IF(AV)): 100mA
• Maximum Forward Voltage (VF): 0.5V at IF = 10mA
• Reverse Recovery Time (trr): Typically less than 5ns
• Operating Temperature Range: -40°C to +85°C

This diode is commonly used in applications where fast switching and low voltage drop are critical. Consult the NEC datasheet for detailed electrical characteristics, performance curves, and application guidelines.