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NT6AN512T32AV-J2

Part No NT6AN512T32AV-J2
Manufacturer NANYA
Catalog DDR
Description LPDDR4-3733 512Mx32 (16Gb)
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 942786-NT6AN512T32AV-J2
Series *
Ultra Librarian 3D Model Ultra Librarian NT6AN512T32AV-J2 CAD Model

Description

The NT6AN512T32AV-J2 is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) module manufactured by NANYA. This memory module is designed to provide high bandwidth and efficient performance for various computing applications, including desktops, laptops, and embedded systems.

Applications

  • Desktop Computers
  • Laptop Computers
  • Embedded Systems
  • Networking Devices
  • Consumer Electronics

Features

  • DDR3 Technology: Utilizes DDR3 architecture, offering improved speed and power efficiency compared to DDR2.
  • High Bandwidth: Provides high data transfer rates for fast and responsive performance.
  • Low Power Consumption: Operates at a lower voltage to reduce power consumption and heat generation.
  • High Density: Offers a significant memory capacity in a compact form factor.
  • 32-bit Data Width: Designed with a 32-bit data width for compatibility with various systems.
  • Auto Refresh: Supports auto-refresh operations for maintaining data integrity.
  • RoHS Compliant: Manufactured in compliance with RoHS standards, ensuring environmental friendliness.

Benefits

  • Enhanced System Performance: Improves the overall performance of computing systems by providing fast and efficient memory access.
  • Increased Multitasking Capabilities: Allows users to run multiple applications simultaneously without performance degradation.
  • Reduced Power Consumption: Contributes to energy savings and longer battery life in portable devices.
  • Improved Reliability: Ensures data integrity and system stability.
  • Cost-Effective Solution: Provides a balance of performance and affordability for a wide range of applications.

Technical Specifications

The NT6AN512T32AV-J2 DDR3 SDRAM module operates at a voltage of 1.5V, which is typical for DDR3 memory. It conforms to JEDEC standards for DDR3 memory modules. It is designed with specific timings for optimal performance, including CAS latency (CL), RAS to CAS delay (tRCD), and RAS precharge time (tRP). The module’s capacity is 512Mb with a 32-bit data width. Further information, including precise operating frequencies, timings, and voltage requirements, can be found in the official NANYA datasheet for this specific part number.

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