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NT5DS32M16BG-5T

Part No NT5DS32M16BG-5T
Manufacturer NANYA
Catalog DDR
Description DDR-400 32Mx16 BGA
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 944006-NT5DS32M16BG-5T
Series *
Ultra Librarian 3D Model Ultra Librarian NT5DS32M16BG-5T CAD Model

Description

The NT5DS32M16BG-5T is a 512Mb Double Data Rate (DDR) SDRAM from NANYA Technology. This memory module is designed for applications requiring high memory bandwidth and efficient data transfer. It's organized as 32M x 16 bits and operates at a specific speed grade indicated by the '-5T' suffix. DDR SDRAM technology achieves its high speed by transferring data on both the rising and falling edges of the clock signal.

Applications

  • Graphics cards
  • Gaming consoles
  • Networking devices
  • Set-top boxes
  • Industrial control systems

Features

  • Double Data Rate (DDR) Architecture: Transfers data on both clock edges for high bandwidth.
  • 512Mb Density (32M x 16): Offers a significant amount of memory capacity.
  • Clock Frequency: Operates at a specific clock frequency determined by the speed grade (-5T).
  • Differential Clock Inputs (CK and /CK): Enhances signal integrity and reduces noise.
  • 8 Internal Banks: Allows for concurrent operations, improving memory utilization.
  • Burst Length: Supports programmable burst lengths (2, 4, 8) for efficient data transfers.
  • Auto Precharge: Simplifies memory management by automatically precharging rows after data access.
  • RoHS Compliant: Meets environmental standards for hazardous substance restriction.

Benefits

  • High Memory Bandwidth: DDR technology enables faster data transfer rates compared to traditional SDRAM.
  • Improved System Performance: Reduces memory bottlenecks and enhances overall system responsiveness.
  • Enhanced Signal Integrity: Differential clock inputs contribute to reliable high-speed operation.
  • Efficient Memory Management: Auto precharge simplifies memory control.
  • Large Capacity: 512Mb density provides ample memory for demanding applications.

Additional Details

The NT5DS32M16BG-5T operates at a specific voltage (typically 2.5V or 1.8V), which is crucial for proper operation. The timing parameters, such as CAS Latency (CL), RAS to CAS Delay (tRCD), and RAS Precharge Time (tRP), are critical for determining the memory's performance. These parameters are usually specified in the NANYA datasheet for this part. The packaging is typically a TSOP (Thin Small Outline Package) suitable for surface mount assembly.

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