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NT5CB64M16DP-CG

Part No NT5CB64M16DP-CG
Manufacturer NANYA
Catalog DDR
Description DDR3-1333 64Mx16 (1Gb) Halogen-Free
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 941728-NT5CB64M16DP-CG
Series *
Ultra Librarian 3D Model Ultra Librarian NT5CB64M16DP-CG CAD Model

Description

The NT5CB64M16DP-CG is a DDR3L SDRAM (Synchronous Dynamic Random-Access Memory) component manufactured by NANYA Technology. It is designed for applications that require low power consumption and high performance, such as mobile devices, embedded systems, and networking equipment.

Applications:

  • Mobile Devices (Smartphones, Tablets)
  • Embedded Systems
  • Networking Equipment (Routers, Switches)
  • Industrial Automation
  • Thin Clients

Features:

  • DDR3L Technology: Utilizes DDR3L technology, operating at a low voltage of 1.35V for reduced power consumption.
  • Capacity: 1Gb (64M x 16) configuration, providing ample memory for various applications.
  • Data Transfer Rate: Supports high data transfer rates, commonly up to 1600 MHz (PC3L-12800).
  • Interface: Standard DDR3 SDRAM interface for compatibility with a wide range of processors and chipsets.
  • Package: Available in a space-saving FBGA (Fine-Pitch Ball Grid Array) package for efficient board mounting.
  • Refresh Options: Supports auto refresh and self-refresh modes to further reduce power consumption during idle periods.

Benefits:

  • Low Power Consumption: Extends battery life in portable devices and reduces overall energy consumption in systems.
  • High Bandwidth: Enables fast data access and processing, improving system performance.
  • Increased Capacity: Provides sufficient memory space for demanding applications.
  • Reliability: NANYA's manufacturing processes ensure high reliability and durability.
  • Cost-Effective: Offers a balance of performance and price for various applications.

Additional Details:

The NT5CB64M16DP-CG is commonly used in applications where power efficiency is a key consideration. Its low voltage operation and high bandwidth capabilities make it suitable for a range of devices. It also supports standard DDR3 features such as burst mode operation and write leveling.

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