The 2SC4155A-T11 is an NPN epitaxial planar silicon transistor manufactured by Mitsubishi Electric. It is designed for high-frequency power amplifier applications in mobile communication devices and other RF equipment.

Applications

• RF power amplifiers
• Oscillators
• Mixers
• High-frequency switching circuits

Features

• High power gain
• Low noise figure
• High transition frequency (fT)
• Excellent linearity
• Surface mount package

Benefits

• Enables efficient amplification of RF signals
• Minimizes noise in receiver circuits
• Suitable for high-frequency applications
• Provides accurate signal reproduction
• Facilitates compact designs

Technical Specifications

The 2SC4155A-T11 features a collector-emitter voltage (VCEO) of 12V and a collector current (IC) of 1.5A. It has a transition frequency (fT) of 6.5 GHz. The power gain (Gp) is typically 12 dB at 2 GHz. The noise figure (NF) is typically 1.5 dB at 2 GHz. The device is available in a SOT-343 surface mount package. It is designed for use in high-frequency power amplifier applications.

This transistor's high transition frequency and low noise figure make it ideal for use in sensitive receiver circuits. Its high power gain enables efficient amplification of RF signals, while its excellent linearity ensures accurate signal reproduction. The surface mount package allows for compact designs and ease of assembly. The 2SC4155A-T11 is suitable for a wide range of high-frequency applications in mobile communication devices and RF equipment.