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2SC3240

Part No 2SC3240
Manufacturer Mitsubishi
Catalog OEM Parts (0 - 9)
Description Trans RF BJT NPN 20V 25A 5-Pin T-45E
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Base Voltage (VCBO) 50 V
Collector Emitter Voltage (VCEO) 20 V
Emitter Base Voltage (VEBO) 5 V
Mount Screw
Number of Elements 2
Number of Pins 5
Polarity NPN
Power Dissipation 8 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1037023-2SC3240
Categories OEM Parts(0-9)
Manufacturer Mitsubishi
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC3240 CAD Model

Description

The 2SC3240 is an NPN epitaxial silicon transistor manufactured by Mitsubishi. It is designed for high-frequency amplification and switching applications. Known for its low noise figure and high gain, the 2SC3240 is often used in RF amplifiers, oscillators, and mixers in communication equipment.

Applications

  • RF amplifiers
  • Oscillators
  • Mixers
  • High-frequency switching circuits
  • Communication equipment

Features

  • NPN epitaxial silicon transistor: Provides stable and reliable performance.
  • High transition frequency (fT): Suitable for high-frequency applications.
  • Low noise figure: Minimizes noise in amplifier circuits.
  • High gain: Provides significant signal amplification.

Benefits

  • Improved signal quality due to low noise amplification.
  • Efficient performance in high-frequency circuits.
  • Enhanced system sensitivity due to high gain.
  • Reliable operation in communication equipment.
  • Stable performance over a wide range of operating conditions.

Technical Specifications: The 2SC3240 is characterized by its transition frequency (fT), collector current (Ic), and collector-emitter voltage (Vceo). It typically comes in a small signal package. The datasheet provides detailed electrical characteristics, thermal resistance, and package dimensions. Proper biasing and impedance matching are crucial for achieving optimal performance in RF applications.

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