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JANTX2N6764

Part No JANTX2N6764
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A) | MOSFET N-CH TO-204AE TO-3
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 38A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 65mOhm at 38A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 125nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 4W, 150W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-3
Manufacturer Package TO-204AE
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191521-JANTX2N6764
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTX2N6764 CAD Model

Description

The JANTX2N6764 is a radiation-hardened N-channel power MOSFET manufactured by Microsemi Corporation. It's designed for high-reliability applications where exposure to radiation is a concern. This MOSFET is commonly used in space applications, military systems, and other environments requiring robust performance in harsh conditions.

Applications:

  • Space-based systems
  • Satellite power management
  • High-reliability DC-DC converters
  • Motor control in radiation environments
  • Power switching in military applications

Features:

  • Radiation Hardened: Designed to withstand high levels of radiation without significant performance degradation.
  • N-Channel MOSFET: Utilizes an N-channel enhancement mode configuration.
  • High Breakdown Voltage: Offers a high drain-source breakdown voltage for reliable operation at higher voltages.
  • Low On-Resistance (RDS(on)): Minimizes power dissipation and improves efficiency.
  • Fast Switching Speed: Enables efficient switching performance in high-frequency applications.
  • Hermetically Sealed Package: Provides robust protection against environmental factors.

Benefits:

  • Reliable Performance in Radiation Environments: Ensures consistent and reliable operation even when exposed to radiation.
  • High Efficiency: Low RDS(on) reduces power loss, leading to increased efficiency.
  • Extended Lifespan: Radiation hardening extends the lifespan of the MOSFET in harsh environments.
  • Simplified Circuit Design: N-channel configuration simplifies circuit design.
  • Robustness: Hermetically sealed package provides excellent protection against environmental factors.

Additional Details:

The JANTX2N6764 typically comes in a hermetically sealed TO-254 or similar package. Key specifications include drain-source voltage (VDS), gate-source voltage (VGS), drain current (ID), and on-resistance (RDS(on)). It's crucial to consult the manufacturer's datasheet for the most accurate and up-to-date specifications and application guidelines. The radiation hardness is usually specified in terms of Total Ionizing Dose (TID) and Single Event Effects (SEE). This MOSFET is commonly used in power supplies, motor controls, and other applications where high reliability and radiation resistance are critical.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $22.0721 $66.2163
7+ $18.1104 $126.7728
10+ $17.5445 $175.4450
14+ $16.9785 $237.6990
18+ $16.4126 $295.4268
24+ $14.7147 $353.1528
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Availability: 955 pieces
In Stock: 515 pieces Factory Stock: 440 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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