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Same model may have multiple batches, images only for reference.
JANTX2N6758 Microsemi Corporation
Same model may have multiple batches, images only for reference.

JANTX2N6758

Part No JANTX2N6758
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9A) | MOSFET N-CH TO-204AA TO-3
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 9A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 490mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 39nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 4W, 75W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-204AA (TO-3)
Manufacturer Package TO-204AA, TO-3
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191520-JANTX2N6758
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTX2N6758 CAD Model

Description

The MOSFET is a high-quality electronic component that is designed to provide efficient performance manufactured by Microsemi Corporation.

  • Transistor Type: N-channel
  • Mounting Type: Through hole
  • Supplier Device Package: TO-204AA (TO-3)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 9A
  • Maximum Rds On: 490mOhm @ 9A and 10V
  • Gate Charge (Qg) @ Maximum Vgs: 39nC @ 10V
  • Suitable for: Use in a wide range of applications, including discrete semiconductor products.
  • Power Dissipation: 4W and 75W
  • Temperature Range: -55°C to 150°C

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