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Same model may have multiple batches, images only for reference.
JAN1N5550 Real Image
Same model may have multiple batches, images only for reference.

JAN1N5550

Part No JAN1N5550
Manufacturer Microsemi Corporation
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 200V 3A AXIAL
Datasheet
JAN1N5550 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/420
Packaging Bulk
Diode Type Standard
Voltage - DC Reverse (Vr) (Maximum) 200V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Maximum) @ If 1.2V @ 9A
Speed Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) 2μs
Current - Reverse Leakage @ Vr 1μA @ 200V
Mounting Style Through Hole
Package B, Axial
Operating Temperature - Junction -65°C ~ 175°C
Win Source Part Number 761167-JAN1N5550
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name 1N5550
ECCN EAR99
Country of Origin United Kingdom
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian JAN1N5550 CAD Model

Description

The Microsemi Corporation Standard diode with a current - average rectified (Io) of 3A is a high-performance electronic component used in various applications.

  • Voltage - DC Reverse (Vr): 200V
  • Voltage - Forward (Vf): 1.2V @ 9A
  • Reverse Recovery Time (trr): 2μs
  • Current - Reverse Leakage @ Vr: 1μA @ 200V
  • Operating Temperature Range: -65°C to 175°C
  • Supply and Demand Status: Limited

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