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Same model may have multiple batches, images only for reference.
APTGT200A120D3G
Same model may have multiple batches, images only for reference.

APTGT200A120D3G

Part No APTGT200A120D3G
Manufacturer Microsemi Corporation
Catalog IGBTs - Modules
Description Phase leg Trench + Field Stop IGBT Power Module
Datasheet
APTGT200A120D3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
IGBT Type Trench Field Stop
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 300A
Power - Max 1040W
Vce(on) (Maximum) @ Vge, Ic 2.1V @ 15V, 200A
Current - Collector Cutoff (Maximum) 6mA
Input Capacitance (Cies) @ Vce 14nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature Range -40°C ~ 150°C (TJ)
Mounting Chassis Mount
Package D-3 Module
Manufacturer Package D3
Win Source Part Number 1146927-APTGT200A120D3G
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name APTGT200A120D3G
Introduction Date September 05, 2008
ECCN EAR99
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian APTGT200A120D3G CAD Model

Description

The APTGT200A120D3G is a Half Bridge IGBT module from Microsemi Corporation capable of handling a maximum power of 1040W.

  • Module Type: Half Bridge IGBT
  • Manufacturer: Microsemi Corporation
  • Maximum Power: 1040W
  • Collector Current: 300A
  • Collector-Emitter Breakdown Voltage: 1200V
  • IGBT Type: Trench Field Stop
  • Input Capacitance: 14nF @ 25V
  • Package: D-3 module
  • Mounting: Chassis Mounted
  • Product Category: Discrete Semiconductor Products
  • Operating Temperature: -40°C to 150°C (TJ)
  • Introduction Date: September 05, 2008
  • Estimated EOL Date: 2026

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2+ $177.8550 $355.7100
3+ $159.4558 $478.3674
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