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Same model may have multiple batches, images only for reference.
APTGF30A60T1G
Same model may have multiple batches, images only for reference.

APTGF30A60T1G

Part No APTGF30A60T1G
Manufacturer Microsemi Corporation
Catalog IGBTs - Modules
Description IGBT MODULE NPT PHASE LEG SP1
Datasheet
APTGF30A60T1G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Status Obsolete(EOL)
IGBT Type NPT
Configuration Half Bridge
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 42A
Maximum Power Dissipation 140W
Collector-emitter saturation voltage(Max) 2.45V @ 15V, 30A
Collector Cut-off Current(Max) 250μA
Input Capacitance (Cies) @ Vce 1.35nF @ 25V
Input Standard
NTC Thermistor Yes
Mounting Chassis Mount
Case / Package SP1
Win Source Part Number 1040946-APTGF30A60T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian APTGF30A60T1G CAD Model

Description

The Microsemi Corporation 1040946-APTGF30A60T1G is a discrete semiconductor product that is used in half-bridge configurations.

  • Configuration: half-bridge
  • Mounting: chassis mount
  • IGBT Type: NPT
  • Input Capacitance: 1.35nF @ 25V
  • Thermistor: NTC
  • Status: obsolete (EOL)
  • Case/Package: SP1
  • Current Collector: 42A (Max)
  • VCEO Collector-Emitter Breakdown Voltage: 600V (Max)
  • Collector Cut-Off Current (Max): 250μA
  • Maximum Power Dissipation: 140W
  • Collector-Emitter Saturation Voltage (Max): 2.45V @ 15V, 30A
  • Supply and Demand Status: balanced

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