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Same model may have multiple batches, images only for reference.
APT50GP60B2DQ2 Real Image
Same model may have multiple batches, images only for reference.

APT50GP60B2DQ2

Part No APT50GP60B2DQ2
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 150A 625W TMAX
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Not For New Designs
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 150A
Pulsed Collector Current 190A
Collector-emitter saturation voltage(Max) 2.7V @ 15V, 50A
Maximum Power Dissipation 625W
Total Switching Energy(Ets) 465μJ (on), 635μJ (off)
Input Type Standard
Gate Charge 165nC
Turn-on and Turn-off delay time 19ns/85ns
Testing Conditions 400V, 50A, 4.3 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Dimension TO-247-3 Variant
Win Source Part Number 051472-APT50GP60B2DQ2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT50GP60B2DQ2 CAD Model

Description

Description of APT50GP60B2DQ2

The APT50GP60B2DQ2 is a precision-engineered component tailored for high-speed switching applications. Its efficient energy management capabilities are integral to its design, promoting prolonged device functionality.

Features and Benefits

  • High Efficiency: Minimizes energy loss while maximizing performance output.
  • Rapid Switching: Designed for applications that require quick response times.
  • Compact Design: Facilitates integration into space-constrained devices.
  • Reliable Performance: Ideal for long-term application stability.

Applications

  • Consumer Electronics
  • Aerospace Systems
  • Telecommunications Equipment
  • Smart Grid Technologies

The APT50GP60B2DQ2 is a highly adaptable component suited for technological environments where precision and efficiency are paramount.

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