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Same model may have multiple batches, images only for reference.
APT50GF120LRG Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT50GF120LRG

Part No APT50GF120LRG
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 135A 781W TO264 / Trans IGBT Chip N-CH 1200V 135A 781000mW 3-Pin(3+Tab) TO-264 Tube
Datasheet
APT50GF120LRG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 135A
Current - Collector Pulsed (Icm) 150A
Vce(on) (Maximum) @ Vge, Ic 3V @ 15V, 50A
Power - Max 781W
Switching Energy 3.6mJ (on), 2.64mJ (off)
Input Type Standard
Gate Charge 340nC
Td (on/off) @ 25°C 25ns/260ns
Test Condition 800V, 50A, 1 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-264-3, TO-264AA
Manufacturer Package TO-264 [L]
Win Source Part Number 768700-APT50GF120LRG
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT50GF120LR
Introduction Date February 28, 2006
ECCN EAR99
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian APT50GF120LRG CAD Model

Description

The Microsemi Corporation APT50GF120LRG is a high power IGBT transistor manufactured by Microsemi Corporation.

  • Maximum Power: 781W
  • IGBT Type: NPT
  • Current Collector Pulsed: 150A
  • Switching Energy: 3.6mJ (on), 2.64mJ (off)
  • Gate Charge: 340nC
  • Td (on/off) @ 25°C: 25ns/260ns
  • Test Condition: 800V, 50A, 1 Ohm, 15V
  • Package: TO-264-3, TO-264AA
  • Operating Temperature Range: -55°C ~ 150°C (TJ)

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