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Same model may have multiple batches, images only for reference.
APT40GT60BRG Microsemi Corporation
Same model may have multiple batches, images only for reference.

APT40GT60BRG

Part No APT40GT60BRG
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 80A 345W TO247
Datasheet
APT40GT60BRG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type NPT
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 160A
Collector-emitter saturation voltage(Max) 2.5V @ 15V, 40A
Maximum Power Dissipation 345W
Total Switching Energy(Ets) 828μJ (off)
Input Type Standard
Gate Charge 200nC
Turn-on and Turn-off delay time 12ns/124ns
Testing Conditions 400V, 40A, 5 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 1018051-APT40GT60BRG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT40GT60BRG CAD Model

Description

The APT40GT60BRG is an IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by Microsemi Corporation.

  • Input Type: Standard
  • Technology: NPT (Non-Punch Through)
  • Gate Charge: 200nC
  • Package: TO-247 [B]
  • Mounting: through a hole
  • Collector-Emitter Saturation Voltage: maximum 2.5V @ 15V and 40A
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 80A
  • Pulsed Collector Current: 160A
  • Total Switching Energy (Ets) Off: 828μJ
  • Turn-On/Off Delay Time: 12ns/124ns
  • Ideal for Use In: discrete semiconductor products
  • Status: active
  • Temperature Range: -55°C to 150°C (TJ)
  • Supply and demand status: limited

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Quantity Unit Price Ext. Price
4+ $17.3265 $69.3060
9+ $14.2167 $127.9503
13+ $13.7725 $179.0425
18+ $13.3282 $239.9076
23+ $12.8839 $296.3297
30+ $11.5511 $346.5330
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