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Same model may have multiple batches, images only for reference.
APT35GP120BG Real Image
Same model may have multiple batches, images only for reference.

APT35GP120BG

Part No APT35GP120BG
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description POWER MOS 7® IGBT
Datasheet
APT35GP120BG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS 7
Packaging Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 1200V
Current - Collector (Ic) (Maximum) 96A
Current - Collector Pulsed (Icm) 140A
Vce(on) (Maximum) @ Vge, Ic 3.9V @ 15V, 35A
Power - Max 543W
Switching Energy 750μJ (on), 680μJ (off)
Input Type Standard
Gate Charge 150nC
Td (on/off) @ 25°C 16ns/94ns
Test Condition 600V, 35A, 5 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247 [B]
Win Source Part Number 1146758-APT35GP120BG
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT35GP120BG CAD Model

Description

The Microsemi Corporation APT35GP120BG is a POWER MOS 7 IGBT transistor, with a maximum power of 543W and a maximum collector current of 96A. Microsemi Corporation APT35GP120BG.

  • Maximum Power: 543W
  • Maximum Collector Current: 96A
  • Voltage Breakdown: 1200V
  • Thermal Resistance: 6.5°C/W
  • Package: TO-247-3
  • Operating Temperature: -55°C to 150°C
  • IGBT Type: PT
  • Gate Charge: 150nC
  • Switching Energy (On): 750μJ
  • Switching Energy (Off): 680μJ
  • Gate-Source Threshold Voltage: 4V @ 94μA
  • td (on/off) @ 25°C: 16ns/94ns
  • Suitable Applications: Power supplies, motor control, and inverters

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