The APT2X61D60J is a silicon carbide (SiC) Schottky diode array from Microsemi Corporation. It consists of two SiC Schottky diodes configured in a common cathode configuration. This device offers superior performance compared to traditional silicon diodes, particularly in high-frequency and high-temperature applications. Its low forward voltage drop and fast reverse recovery time make it ideal for improving efficiency and reducing switching losses in power electronic systems.

Applications

• Power factor correction (PFC) circuits
• Motor drives
• Solar inverters
• Uninterruptible power supplies (UPS)
• High-frequency rectifiers

Features

• Silicon Carbide (SiC) Schottky Diode
• Low forward voltage drop
• Virtually no reverse recovery
• High-frequency operation
• High surge current capability
• High blocking voltage

Benefits

• Improved efficiency due to low forward voltage drop and negligible reverse recovery losses
• Reduced switching losses, leading to cooler operation
• Higher operating frequencies are possible
• Enhanced system reliability due to high surge current capability
• Reduced EMI due to fast switching characteristics
• Simplified thermal management due to lower power dissipation

Technical Specifications

The APT2X61D60J features a repetitive peak reverse voltage (VRRM) of 600V. The continuous forward current (IF) is typically 61A. The surge current (IFSM) capability is high, providing robustness against transient events. The typical forward voltage drop (VF) is low, contributing to high efficiency. The junction temperature range is typically from -55°C to +175°C. The device is available in a industry-standard package for easy mounting and thermal management. The absence of reverse recovery current eliminates a major source of switching losses, significantly improving overall system efficiency.