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APT27GA90BD15

Part No APT27GA90BD15
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description High Speed PT IGBT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 900V
Current - Collector (Ic) (Maximum) 48A
Current - Collector Pulsed (Icm) 79A
Vce(on) (Maximum) @ Vge, Ic 3.1V @ 15V, 14A
Power - Max 223W
Switching Energy 413μJ (on), 287μJ (off)
Input Type Standard
Gate Charge 62nC
Td (on/off) @ 25°C 9ns/98ns
Test Condition 600V, 14A, 10 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-247-3
Manufacturer Package TO-247 [B]
Win Source Part Number 1146692-APT27GA90BD15
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name APT27GA90BD15
Introduction Date May 21, 2008
ECCN EAR99
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian APT27GA90BD15 CAD Model

Description

The APT27GA90BD15 is a single IGBT (Insulated Gate Bipolar Transistor) manufactured by Microsemi Corporation. IGBTs are power semiconductor devices used for high-efficiency switching in various power electronic applications. This specific device is designed for applications requiring high voltage and current handling capabilities, along with robust performance and reliability. IGBTs combine the advantages of MOSFETs (metal-oxide-semiconductor field-effect transistors) and BJTs (bipolar junction transistors), offering high input impedance and low on-state voltage drop.

Applications:

  • Uninterruptible Power Supplies (UPS): Power inverters for providing backup power.
  • Welding Machines: Controlling the welding current and voltage.
  • Induction Heating: Generating high-frequency AC power for heating metals.
  • Power Factor Correction (PFC): Improving the power factor in electronic systems.

Features:

  • High Voltage Rating: Designed to operate at high DC voltages.
  • Low On-State Voltage Drop: Minimizes power losses during conduction.
  • Fast Switching Speed: Enables high-frequency operation and reduces switching losses.
  • Avalanche Capability: Withstands transient voltage spikes.
  • Isolated Mounting Base: Provides electrical isolation between the device and the heatsink.

Benefits:

  • High Efficiency: Reduces energy consumption and lowers operating costs.
  • Reliable Operation: Ensures stable and consistent performance in demanding applications.
  • Compact Size: Enables smaller and more integrated system designs.
  • Simplified Drive Circuitry: Reduces complexity and cost.
  • Optimized Performance: Designed for specific applications and operating conditions.

Additional Details:

The APT27GA90BD15 IGBT features a robust package designed for efficient heat dissipation. Key specifications include collector-emitter voltage, collector current, gate-emitter voltage, and switching frequencies. The IGBT incorporates advanced technology to minimize switching losses and improve overall efficiency. The isolated mounting base simplifies thermal management and provides electrical isolation. The device is designed for reliable operation in harsh environments. Detailed specifications and application notes are available in the product datasheet. Proper cooling is essential for optimal performance and long-term reliability. The device is lead-free and RoHS compliant. It is important to consult the manufacturer's datasheet for detailed information on mounting, cooling, and application guidelines. The gate threshold voltage and input capacitance are key parameters for designing the gate drive circuitry.

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