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2N6788

Part No 2N6788
Manufacturer Microsemi Corporation
Catalog FETs - Single
Description POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A) | MOSFET N-CH 100V TO-205AF
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 6A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 300mOhm at 3.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 18nC at 10V
Gate Source Voltage (Maximum) ±20V
Power Dissipation (Maximum) 800mW
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-39
Manufacturer Package TO-205AF Metal Can
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1124198-2N6788
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N6788 CAD Model

Description

The 2N6788 is an electronic component manufactured by Microsemi Corporation.

  • Win Source Part Number: 1124198-2N6788
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Product Status: Obsolete
  • Power Dissipation Rating: 800mW
  • Vds - Drain-Source Breakdown Voltage: 100V
  • Id - Continuous Drain Current: 6A
  • Rds On (Maximum) @ Id, Vgs: 300mOhm @ 3.5A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 10V
  • Gate Source Voltage (Maximum): ±20V
  • Manufacturer Homepage: www.irf.com

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.8317 $69.1585
11+ $11.3492 $124.8412
16+ $10.9944 $175.9104
22+ $10.6399 $234.0778
29+ $10.2852 $298.2708
38+ $9.2212 $350.4056
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,400 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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