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Same model may have multiple batches, images only for reference.
2N3735 Real Image
Same model may have multiple batches, images only for reference.

2N3735

Part No 2N3735
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description Type 2N3735 Geometry TBD Polarity NPN | TRANS NPN 40V 1.5A TO-39
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 1.5A
Voltage - Collector Emitter Breakdown (Maximum) 40V
Vce Saturation (Maximum) at Ib, Ic 900mV at 100mA, 1A
Current - Collector Cutoff (Maximum) 10μA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 20 at 1A, 1.5V
Maximum Power 1W
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-205AD, TO-39-3 Metal Can
Supplier Device Package TO-39 (TO-205AD)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1123768-2N3735
Manufacturer Homepage www.semicoa.com/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N3735 CAD Model

Description

The Microsemi Corporation 2N3735 is a high-performance NPN transistor that is designed for use in a wide range of electronic applications.

  • Maximum Collector Current: 1.5A
  • Breakdown Voltage: 40V
  • Mounting Style: through-hole
  • Package: TO-39 (TO-205AD)
  • Current Gain: 20 @ 1A and 1.5V

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