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1N5811US

Part No 1N5811US
Manufacturer Microsemi Corporation
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 150V 3A B-MELF
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Active
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 150V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 875mV @ 4A
Speed(Frequency) Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) 30ns
Current - Reverse Leakage @ Vr 5μA @ 50V
Capacitance @ Vr, F 60pF @ 10V, 1MHz
Mounting SMD (SMT)
Case / Package B, SQ-MELF
Operating Temperature - Junction -65°C to 175°C
Win Source Part Number 132960-1N5811US
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Industrial
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian 1N5811US CAD Model

Description

Overview

The 1N5811US is a Schottky Barrier Rectifier Diode known for its low voltage drop and high efficiency. This component is perfect for circuits needing rapid forward switching and low heat generation.

Features and Benefits

  • Low forward voltage drop: Reduces energy loss and heat dissipation.
  • Fast recovery time: Ideal for high-frequency applications.
  • High reliability: Excellent durability in demanding applications.

Applications

  • Switching Power Supplies
  • Free-Wheeling Diodes
  • Reverse Polarity Protection

The 1N5811US is highly suited for designs striving for energy efficiency without compromising circuit integrity.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.0611 $50.3055
13+ $8.2553 $107.3189
19+ $7.9973 $151.9487
26+ $7.7394 $201.2244
34+ $7.4814 $254.3676
45+ $6.7074 $301.8330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,000 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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