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Same model may have multiple batches, images only for reference.
MT53E1G16D1ZW-046 AAT:C Micron Technology Inc.
Same model may have multiple batches, images only for reference.

MT53E1G16D1ZW-046 AAT:C

Part No MT53E1G16D1ZW-046 AAT:C
Manufacturer Micron Technology Inc.
Catalog Memory
Description LPDDR4 16GBIT 16 200/264 TFBGA 1
Datasheet
MT53E1G16D1ZW-046 AAT:C Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1306985-MT53E1G16D1ZW-046 AAT:C
Category Integrated Circuits (ICs) Memory Memory
Mfr Micron Technology Inc.
Packaging Tray
Part Status Active
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - Mobile LPDDR4X
Memory Size 16Gbit
Memory Organization 1G x 16
Memory Interface Parallel
Ultra Librarian 3D Model Ultra Librarian MT53E1G16D1ZW-046 AAT:C CAD Model

Description

  • Ultra-low-voltage core and I/O power supplies 
    VDD1 = 1.70–1.95V; 1.80V nominal
    VDD2 = 1.06–1.17V; 1.10V nominal
    VDDQ = 1.06–1.17V; 1.10V nominal or low VDDQ = 0.57–0.65V; 0.60V nominal 
  • Frequency range
    2133–10 MHz (data rate range: 4266–20 Mb/s per pin)
  • 16n prefetch DDR architecture 
  • 8 internal banks per channel for concurrent operation 
  • Single-data-rate CMD/ADR entry 
  • Bidirectional/differential data strobe per byte lane 
  • Programmable READ and WRITE latencies (RL/WL) 
  • Programmable and on-the-fly burst lengths (BL = 16, 32) 
  • Directed per-bank refresh for concurrent bank operation and ease of command scheduling 
  • Up to 8.5 GB/s per die
  • On-chip temperature sensor to control self refresh rate 
  • Partial-array self refresh (PASR) 
  • Selectable output drive strength (DS)
  • Clock-stop capability 
  • RoHS-compliant, “green” packaging 
  • Programmable VSS (ODT) termination 
  • Single-ended CK and DQS support
  • Improved tRFCab/tRFCpb = 280ns/140ns 
  • AEC-Q100

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Quantity Unit Price Ext. Price
1+ $259.7015 $259.7015
2+ $232.8359 $465.6718
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