The Micron MT53D1024D32D4DT-053 WT:D is a high-performance DDR4 SDRAM (Synchronous Dynamic Random-Access Memory) component designed for a variety of applications requiring high bandwidth and low latency.

Applications

• High-end Desktop Computers
• Servers
• Workstations
• Networking Devices
• Embedded Systems with significant memory needs

Features

• Capacity: 4GB (1024M x 32)
• Interface: DDR4 SDRAM
• Data Rate: Up to 1866 MT/s
• Operating Voltage: 1.2V
• CAS Latency (CL): Specified in the part number's timing parameters
• Burst Length: 8
• On-Die Termination (ODT): Improves signal integrity
• Write CRC: Provides error detection and correction capabilities
• Lead-Free and RoHS Compliant
• Package: FBGA

Benefits

• Large Capacity: The 4GB capacity provides ample memory space for demanding applications.
• High Bandwidth: DDR4 technology delivers increased bandwidth, enabling faster data transfer rates.
• Low Power Consumption: Operates at 1.2V, reducing power consumption and heat generation, making it ideal for energy-efficient systems.
• Improved Signal Integrity: On-Die Termination (ODT) minimizes signal reflections, ensuring reliable data transfer at high speeds.
• Enhanced Data Reliability: Write CRC helps detect and correct errors, maintaining data integrity.

Technical Specifications

The MT53D1024D32D4DT-053 WT:D is compliant with JEDEC standards for DDR4 SDRAM. It supports various timing parameters and configurations for optimal performance. The component is manufactured using advanced process technology for enhanced reliability and low power consumption. Refer to the Micron datasheet for detailed timing specifications, electrical characteristics, and package information.