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MT46V32M16FN-6 L:F

Part No MT46V32M16FN-6 L:F
Manufacturer Micron Technology Inc.
Catalog DDR
Description LPDDR-333 32Mx16 CL2.5 FBGA
Sample
Rohs State rohs
ECAD Module
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Categories Memory
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Win Source Part Number 943473-MT46V32M16FN-6 L:F
Ultra Librarian 3D Model Ultra Librarian MT46V32M16FN-6 L:F CAD Model

Description

The MT46V32M16FN-6 L:F is a Double Data Rate (DDR) SDRAM component manufactured by Micron Technology Inc. This memory chip is designed to provide high bandwidth and low latency, making it suitable for various computing and embedded system applications. It offers a capacity of 32Mb, organized as 2M x 16 bits, and operates at a data rate of up to 166 MHz, resulting in a bandwidth of up to 333 Mbps.

Applications

  • Graphics cards
  • Networking equipment (routers, switches)
  • Digital signal processing (DSP) systems
  • Embedded systems with moderate memory requirements
  • Consumer electronics devices

Features

  • Double data rate (DDR) architecture: Enables data transfer on both rising and falling edges of the clock signal, effectively doubling the bandwidth compared to single data rate SDRAM.
  • Data rate of up to 166 MHz: Provides a high data transfer rate, supporting demanding applications.
  • 32Mb density: Offers a balance between memory capacity and cost for a range of applications.
  • 2M x 16 organization: Allows for efficient memory access and data manipulation.
  • Differential clock inputs (CK and /CK): Enhance noise immunity and signal integrity.
  • Double data strobe (DQS): Facilitates accurate data capture and timing.
  • On-chip DLL (Delay-Locked Loop): Ensures accurate timing and synchronization.
  • 8 internal banks: Allows for concurrent memory operations, improving overall performance.
  • Precharge and power-down modes: Conserves power when the device is not actively being used.
  • Lead-free construction: Complies with environmental regulations.

Benefits

  • Increased bandwidth: The DDR architecture provides significantly higher bandwidth compared to traditional SDRAM, enabling faster data processing.
  • Improved performance: The high data rate and efficient memory organization contribute to improved system performance in demanding applications.
  • Reduced power consumption: Power-down modes help minimize power consumption when the device is idle.
  • Enhanced reliability: Differential clock inputs and on-chip DLL improve signal integrity and timing accuracy, contributing to overall system reliability.
  • Simplified system design: The component's features and specifications simplify the design and integration process for system developers.

Additional Details

The MT46V32M16FN-6 L:F operates at a voltage of 2.5V. It is available in a standard TSOP package. This DDR SDRAM is designed for use in systems that require high-speed data transfer and low latency, making it a suitable choice for a wide range of applications. The -6 indicates a specific speed grade. “L:F” likely refers to a specific manufacturing lot or testing variation.

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