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MT41K128M16JT-107:E

Part No MT41K128M16JT-107:E
Manufacturer Micron Technology Inc.
Catalog DDR
Description DDR3-1866 128Mx16 (2Gb) 1.35V
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ECAD Module
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Categories Memory
Series *
Win Source Part Number 941305-MT41K128M16JT-107:E
Ultra Librarian 3D Model Ultra Librarian MT41K128M16JT-107:E CAD Model

Description

The MT41K128M16JT-107:E is a DDR3L SDRAM (Double Data Rate 3 Low Voltage Synchronous DRAM) component manufactured by Micron Technology Inc. This module is designed for applications requiring high memory bandwidth and low power consumption. It is organized as 128Mb x 16, resulting in a total capacity of 2 Gigabit (2Gb) or 256 Megabytes (MB). The 'DDR3L' designation means that it operates at a lower voltage (1.35V) compared to standard DDR3, enhancing power efficiency.

Applications:

  • Networking: Suitable for use in routers, switches, and network interface cards (NICs) to provide high-speed data transfer and processing capabilities.
  • Industrial Automation: Integrated into industrial PCs, programmable logic controllers (PLCs), and other automation equipment where reliable and efficient memory is required.
  • Embedded Systems: Used in a variety of embedded systems, including single-board computers (SBCs) and system-on-modules (SOMs), for efficient memory management.
  • Consumer Electronics: Found in devices like smart TVs, set-top boxes, and gaming consoles to enhance multimedia performance.
  • Automotive: Employed in automotive infotainment systems and advanced driver-assistance systems (ADAS) for real-time data processing and decision-making.

Features:

  • DDR3L Technology: Operates at 1.35V, which reduces power consumption compared to standard DDR3 memory.
  • High Speed: Supports data transfer rates up to 933 MT/s (MegaTransfers per second), facilitating fast memory access.
  • 8n-Prefetch Architecture: Improves data throughput by prefetching data in blocks of eight words.
  • On-Die Termination (ODT): Minimizes signal reflections and enhances signal integrity at high speeds.
  • Write Leveling: Optimizes write timing to ensure data reliability and prevent data corruption.
  • RoHS Compliant: Meets the requirements of the Restriction of Hazardous Substances directive, making it environmentally friendly.

Benefits:

  • Improved Energy Efficiency: Lower voltage operation reduces power consumption, extending battery life in portable devices and lowering operating costs in servers.
  • Enhanced Performance: Fast data transfer rates enable faster application loading and smoother multitasking.
  • Increased Reliability: Advanced features like ODT and write leveling ensure data integrity and system stability.
  • Reduced Heat Generation: Lower power consumption translates to less heat, simplifying thermal management and potentially extending component lifespan.
  • Long-Term Availability: Designed for durability and long-term supply, ensuring reliable component sourcing for manufacturers.

Additional Details:

The MT41K128M16JT-107:E typically comes in a FBGA (Fine-pitch Ball Grid Array) package for efficient board mounting and space utilization. The suffix ':E' likely indicates specific testing or screening criteria applied to the module, potentially related to temperature or performance characteristics. It includes features such as asynchronous reset and ZQ calibration to optimize signal integrity and ensure robust operation under various conditions. The '-107' portion of the part number indicates a speed grade, generally corresponding to a 933 MHz clock rate (DDR3L-1866). The module's adherence to JEDEC standards simplifies integration into a wide range of applications.

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