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MT29F4G08ABAEAM70M3WC1

Part No MT29F4G08ABAEAM70M3WC1
Manufacturer Micron Technology Inc.
Catalog IT infrastructure Memory
Description 4Gb NAND Flash Wafer
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category IT infrastructure Memory
Win Source Part Number 1453156-MT29F4G08ABAEAM70M3WC1
Manufacturer Micron Technology Inc.
Package Bulk
Product Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Ultra Librarian 3D Model Ultra Librarian MT29F4G08ABAEAM70M3WC1 CAD Model

Description

The MT29F4G08ABAEAM70M3WC1 is a state-of-the-art NAND Flash memory chip manufactured by Micron Technology. With a storage capacity of 4 gigabits (Gb), this memory wafer is designed to meet the high-capacity and performance demands of modern electronic devices. The chip utilizes advanced manufacturing technologies to provide reliable data storage and quick access times, making it an ideal choice for a wide range of applications, including solid-state drives (SSDs), digital cameras, smartphones, and other digital devices that require high-speed and high-density memory. The product features robust error-correction capabilities and is engineered to perform in a wide range of environmental conditions, ensuring data integrity and longevity. Micron's expertise in memory technologies ensures that this NAND flash memory chip offers superior performance, durability, and energy efficiency, making it a top choice for manufacturers seeking to enhance their products with leading-edge storage solutions.

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