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JS28F512P33BFD

Part No JS28F512P33BFD
Manufacturer Micron Technology Inc.
Catalog Flash
Description Micron Parallel NOR Flash Embedded Memory (P33-65nm) | IC FLASH 512M PARALLEL 56TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer Micron Technology Inc.
Packaging Tray
Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 512Mb (32M x 16)
Memory Interface Parallel
Clock Frequency 40MHz
Write Cycle Time - Word, Page 105ns
Access Time 105ns
Supply Voltage (V) 2.3V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Family Part Number 28F512P33
Manufacturer Pack Quantity 576
MSL Level 3 (168 Hours)
Win Source Part Number 1191772-JS28F512P33BFD
Manufacturer Homepage www.micron.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JS28F512P33BFD CAD Model

Description

The JS28F512P33BFD is a 512-Mbit (64 MB) Parallel Flash Memory device manufactured by Micron Technology. It is a high-performance, non-volatile memory solution designed for embedded applications requiring fast read and write speeds, high endurance, and low power consumption. This memory device is organized as 32M x 16 bits, offering a wide data bus for quick data transfer.

Applications:

  • Embedded systems
  • Networking equipment
  • Industrial automation
  • Medical devices
  • Automotive electronics

Features:

  • 512-Mbit (64 MB) capacity
  • Parallel interface
  • 3.0V operating voltage
  • Asynchronous read/write operations
  • Sector erase architecture
  • Program suspend and erase suspend capabilities

Benefits:

  • Fast data access for quick system boot-up and application execution
  • High endurance for long-term data storage reliability
  • Low power consumption for energy-efficient operation
  • Flexible memory management with sector erase architecture
  • Increased system responsiveness with program/erase suspend features

Specifications:

The JS28F512P33BFD operates at a voltage of 3.0V. It features a parallel interface, enabling high-speed data transfers. The device supports asynchronous read and write operations, allowing for flexible memory access timing. The sector erase architecture enables efficient memory management by allowing individual sectors to be erased without affecting other data. Program suspend and erase suspend capabilities allow the system to interrupt and resume programming or erasing operations, enhancing system responsiveness.

The memory device is available in a variety of packages, including BGA. The operating temperature range is typically -40°C to +85°C, making it suitable for industrial and automotive applications. The device also incorporates advanced security features to protect against unauthorized access and data corruption.

This parallel flash memory is designed for applications requiring reliable and high-performance non-volatile storage. Its combination of fast data access, high endurance, and low power consumption makes it an ideal choice for a wide range of embedded systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $82.7465 $82.7465
2+ $80.1605 $160.3210
3+ $77.5756 $232.7268
4+ $74.9895 $299.9580
6+ $67.2314 $403.3884
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Prices are subject to market and will be confirmed after the order is placed.
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
Order Increment : 1 pcs
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