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JANTXV1N5711UR-1

Part No JANTXV1N5711UR-1
Manufacturer Microchip Technology
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 50V 33MA DO213AA / Diode Schottky 50 V 33mA Surface Mount DO-213AA
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Rohs State Need to verify
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Manufacturer Microchip Technology
Packaging Bulk
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 50 V
Current - Average Rectified (Io) 33mA
Voltage - Forward (Vf) (Max) @ If 410 mV @ 1 mA
Speed Small Signal =< 200mA (Io), Any Speed
Current - Reverse Leakage @ Vr 200 nA @ 50 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz
Mounting Surface Mount
Case / Package DO-213AA
Supplier Device Package DO-213AA
Operating Temperature - Junction -65°C ~ 150°C
Base Product Number 1N5711
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Other Part Number 1086-15574,1086-15574-MIL
Standard Package 1
Win Source Part Number 1325181-JANTXV1N5711UR-1
Ultra Librarian 3D Model Ultra Librarian JANTXV1N5711UR-1 CAD Model

Description

Product Overview: JANTXV1N5711UR-1

The JANTXV1N5711UR-1 is a high-quality Schottky barrier diode crafted with precision and reliability in mind by Microchip Technology. This component is specifically designed to meet the stringent requirements of military and aerospace applications, providing exceptional performance in a range of demanding environments.

Key Features

  • High Reliability: As a JANTXV-level product, this diode meets the rigorous standards of MIL-PRF-19500, ensuring top-tier reliability and performance for mission-critical applications.
  • Low Forward Voltage Drop: The diode offers a low forward voltage drop, which enhances efficiency in electrical circuits by minimizing power loss during operation.
  • Fast Switching Capability: The JANTXV1N5711UR-1 is designed for fast switching, making it an ideal choice for high-frequency applications.
  • Hermetically Sealed: The diode's hermetic seal guarantees protection against environmental factors such as moisture and dust, thereby ensuring long-term stability and functionality.
  • Low Reverse Leakage Current: With its low reverse leakage current, this diode maintains performance by preventing excessive current from flowing in the reverse direction.

Applications

The JANTXV1N5711UR-1 is suited for a wide range of applications, particularly where durability and consistent performance are non-negotiable. These include:

  • Power Supply Design
  • Voltage Clamping
  • Protection Circuits
  • Switching Power Supplies
  • Frequency Converters
  • Aerospace and Defense Systems

Technical Specifications

Microchip Technology has equipped the JANTXV1N5711UR-1 with the following specifications:

  • Package: Surface Mount DO-213AA (MELF)
  • Peak Repetitive Reverse Voltage: 70 Volts
  • Forward Continuous Current: 15 mA
  • Maximum Forward Voltage at If: 1.0 Volts
  • Maximum Reverse Leakage Current at Vr: 2.0 µA
  • Operating Junction Temperature Range: -65°C to +150°C

With its robust construction and adherence to military specifications, the JANTXV1N5711UR-1 from Microchip Technology stands out as a reliable choice for engineers and designers looking for a diode that can withstand the rigors of high-stakes applications while delivering consistent, high-performance results.

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