Microchip Technology AT24C08N-10SI EEPROM

The Microchip Technology AT24C08N-10SI is a high-performance, 8-Kbit Electrically Erasable Programmable Read-Only Memory (EEPROM) device that offers a robust storage solution for advanced electronic systems. This integrated circuit is designed to provide a reliable non-volatile memory storage option for a wide range of applications, including but not limited to consumer electronics, automotive, industrial control systems, and smart cards.

Featuring a standard serial I²C compatible (Two-Wire) interface, the AT24C08N-10SI allows for easy integration into existing designs and enables a simple, efficient communication protocol with microcontrollers and processors. The device supports a supply voltage range of 2.7V to 5.5V, making it versatile for various operating environments and compatible with both 3.3V and 5V systems.

With an organization of 1024 words of 8 bits each, the AT24C08N-10SI is partitioned into 256-byte pages, allowing for efficient page write operations. This feature is particularly useful for applications requiring frequent updates to data stored within the EEPROM. The device's endurance is rated for 1 million write cycles, with a data retention period of over 100 years, ensuring data integrity and longevity for critical applications.

The AT24C08N-10SI is available in a compact 8-lead SOIC package, which is ideal for space-constrained applications. Additionally, the device is specified for the extended industrial temperature range of -40°C to +85°C, providing reliable performance under harsh environmental conditions.

Key features of the AT24C08N-10SI include:

• 8-Kbit (1024 x 8) memory size
• Low-voltage operation (2.7V - 5.5V)
• Serial I²C (Two-Wire) interface
• 256-byte page write mode
• Self-timed write cycle with auto-clear
• 1 million write cycle endurance
• 100-year data retention
• 8-lead SOIC package
• Industrial temperature range (-40°C to +85°C)

Overall, the Microchip Technology AT24C08N-10SI EEPROM is a reliable and durable choice for designers looking for a non-volatile memory solution that combines performance, flexibility, and a small form factor.