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APT50GN120L2DQ2G

Part No APT50GN120L2DQ2G
Manufacturer Microchip Technology
Catalog IGBTs - Single
Description IGBT 1200V 134A 543W TO264 / IGBT NPT, Trench Field Stop 1200 V 134 A 543 W Through Hole
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer Microchip Technology
Packaging Tube
IGBT Type NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 134 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Power - Max 543 W
Switching Energy 4495µJ (off)
Input Type Standard
Gate Charge 315 nC
Td (on/off) @ 25°C 28ns/320ns
Test Condition 800V, 50A, 2.2Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Through Hole
Case / Package TO-264-3, TO-264AA
Base Product Number APT50GN120
RoHS Status RoHS Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number APT50GN120L2DQ2GMI-ND,APT50GN120L2DQ2GMI
Standard Package 25
Win Source Part Number 1324938-APT50GN120L2DQ2G
Ultra Librarian 3D Model Ultra Librarian APT50GN120L2DQ2G CAD Model

Description

Introducing the APT50GN120L2DQ2G Power MOSFET by Microchip Technology

Microchip Technology's APT50GN120L2DQ2G is a state-of-the-art power MOSFET designed for high-efficiency power conversion applications. This advanced semiconductor device is a perfect solution for designers looking to enhance system performance in a variety of power systems, including switch-mode power supplies, motor drives, and power inverters.

Key Features:

  • High Voltage Capability: The APT50GN120L2DQ2G operates at a high breakdown voltage of 1200V, making it ideal for applications that require high voltage operation without compromising performance and reliability.
  • Low On-Resistance: With an extremely low on-resistance (RDS(on)), this MOSFET ensures minimal conduction losses, leading to improved overall efficiency in power conversion systems.
  • Fast Switching Performance: The device's fast switching characteristics minimize switching losses, which is critical for high-frequency power switching applications.
  • Robust Body Diode: The APT50GN120L2DQ2G features a rugged body diode that can handle high surge currents and offers a reliable free-wheeling function when used in inductive loads.
  • High Temperature Operation: Engineered to perform reliably at high temperatures, this MOSFET can handle extreme thermal environments, which is essential for demanding industrial applications.

Advanced Technology:

The APT50GN120L2DQ2G incorporates Microchip's proprietary PowerMESH™ technology, which optimizes the cell structure for reduced on-resistance and decreased gate charge, enhancing the overall efficiency and thermal performance of the device.

Applications:

This power MOSFET is versatile and can be used in a wide range of applications, including:

  • Uninterruptible power supplies (UPS)
  • High-power DC-DC converters
  • Electric vehicle (EV) charging stations
  • Solar power inverters
  • Welding equipment

Reliability and Quality:

As with all Microchip products, the APT50GN120L2DQ2G is manufactured to the highest quality standards, ensuring reliability and performance consistency. It is a testament to Microchip Technology's commitment to providing innovative, robust, and energy-efficient solutions to the power electronics market.

Whether you're designing a new power system or upgrading an existing one, the APT50GN120L2DQ2G offers the performance, efficiency, and reliability needed to meet the challenges of modern power applications.

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