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APT15GT120BRDQ1G

Part No APT15GT120BRDQ1G
Manufacturer Microchip Technology
Catalog IGBTs - Single
Description IGBT 1200V 36A 250W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Microchip Technology
Series Thunderbolt IGBT®
Package Tube
Product Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 36 A
Current - Collector Pulsed (Icm) 45 A
Vce(on) (Max) @ Vge, Ic 3.6V @ 15V, 15A
Power - Max 250 W
Switching Energy 585µJ (on), 260µJ (off)
Input Type Standard
Gate Charge 105 nC
Td (on/off) @ 25°C 10ns/85ns
Test Condition 800V, 15A, 5Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 [B]
Base Product Number APT15GT120
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 563957-APT15GT120BRDQ1G
Ultra Librarian 3D Model Ultra Librarian APT15GT120BRDQ1G CAD Model

Description

The APT15GT120BRDQ1G from Microchip Technology is a high-performance, silicon carbide (SiC) power transistor designed for a variety of applications that demand high efficiency, reliability, and thermal performance. This cutting-edge component is part of Microchip's extensive portfolio of power electronic devices, which are renowned for their quality and durability.

Key Features

  • Wide Bandgap SiC Material: The device is built using silicon carbide, which allows for higher voltage thresholds, increased thermal conductivity, and lower switching losses compared to traditional silicon devices.
  • High Voltage Rating: With a voltage rating of 1200V, the APT15GT120BRDQ1G is well-suited for high-voltage applications, offering designers the flexibility to work in demanding power environments.
  • High Current Capacity: The transistor is capable of handling continuous currents up to 15A, making it ideal for applications that require robust power handling capabilities.
  • Low On-Resistance: The low on-resistance (RDS(on)) minimizes conduction losses and improves overall efficiency, which is critical in power-sensitive designs.
  • Fast Switching Speed: The fast switching characteristics of the APT15GT120BRDQ1G reduce transition losses and enable higher frequency operation, which can lead to smaller and more efficient power supply designs.
  • Robust Package: Encased in a TO-247 package, the device offers excellent mechanical strength and compatibility with standard mounting and heat sinking methods.

Applications

The APT15GT120BRDQ1G is suitable for a wide range of high-performance applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Motor Drives
  • Renewable Energy Systems
  • Electric Vehicle (EV) Charging Stations
  • High Voltage DC/DC Converters

Why Choose APT15GT120BRDQ1G?

Microchip Technology's APT15GT120BRDQ1G is an excellent choice for designers looking to leverage the benefits of silicon carbide in their power conversion systems. The combination of high voltage capability, low on-resistance, and high current handling, along with the fast switching speeds, makes this device a highly efficient solution for reducing energy consumption and improving thermal management in a variety of power applications.

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