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1N6642US

Part No 1N6642US
Manufacturer Microchip Technology
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 75V 300MA D-5D
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Microchip Technology
Package Bulk
Product Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 75 V
Current - Average Rectified (Io) 300mA
Voltage - Forward (Vf) (Max) @ If 1.2 V @ 100 mA
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 5 ns
Current - Reverse Leakage @ Vr 500 nA @ 75 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case SQ-MELF, D
Supplier Device Package D-5D
Operating Temperature - Junction -65°C ~ 175°C
Base Product Number 1N6642
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070
Win Source Part Number 1012372-1N6642US
Ultra Librarian 3D Model Ultra Librarian 1N6642US CAD Model

Description

Product Overview: 1N6642US - Microchip Technology

The 1N6642US from Microchip Technology is a high-reliability, controlled avalanche silicon rectifier diode designed to meet the stringent requirements of military and aerospace applications. This small signal switching diode is a vital component in a wide range of electronic systems, providing efficient rectification, protection, and signal processing functionalities.

Key Features

  • Voltage Rating: The 1N6642US is capable of withstanding repetitive reverse voltage up to 75V, making it suitable for a variety of high-voltage applications.
  • Current Capacity: It features a forward current rating of 400mA, ensuring adequate current handling capabilities for most small signal operations.
  • High Reliability: Crafted with Microchip's commitment to quality, this diode is built to offer exceptional performance stability and longevity under harsh conditions.
  • Controlled Avalanche: The diode is designed to safely absorb high-energy surges, thanks to its controlled avalanche characteristics, protecting sensitive circuit components from potential damage.
  • Hermetically Sealed: Enclosed in a hermetically sealed package, the 1N6642US is protected from environmental factors such as moisture and dust, contributing to its robustness and durability.
  • Low Reverse Leakage: Exhibiting low reverse leakage current, it ensures minimal power loss and enhances the efficiency of the electronic system it is used in.
  • Fast Switching Speed: The diode's fast switching speed is ideal for high-frequency applications, providing quick transitions and reducing energy losses.

Applications

The 1N6642US is versatile and can be utilized in a variety of military and aerospace applications, including power supply circuits, voltage clamping, protection circuits, and signal processing. Its reliability and performance also make it an excellent choice for sophisticated commercial systems that require military-grade components.

Quality Assurance

Microchip Technology ensures that the 1N6642US meets the highest quality standards, including MIL-PRF-19500/578 specifications. Each diode is subjected to rigorous testing and screening processes to guarantee reliable operation in the field.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.8320 $59.3280
9+ $12.1699 $109.5291
13+ $11.7896 $153.2648
18+ $11.4093 $205.3674
23+ $11.0290 $253.6670
31+ $9.8880 $306.5280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 232 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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