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1N5809US

Part No 1N5809US
Manufacturer Microchip Technology
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 100V 3A B-MELF / Diode Standard 100 V 3A Surface Mount B, SQ-MELF
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Microchip Technology
Package Bulk
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 875 mV @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Capacitance @ Vr, F 60pF @ 10V, 1MHz
Mounting SMD (SMT)
Package / Case SQ-MELF, B
Supplier Device Package B, SQ-MELF
Operating Temperature - Junction -65°C ~ 175°C
Base Product Number 1N5809
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Standard Package 1
Win Source Part Number 983353-1N5809US
Ultra Librarian 3D Model Ultra Librarian 1N5809US CAD Model

Description

The 1N5809US is a high-reliability, controlled avalanche silicon rectifier diode from Microchip Technology, a leading provider of smart, connected, and secure embedded control solutions. This diode is specifically designed to meet the stringent requirements of military and aerospace applications, ensuring consistent performance in the most demanding environments.

Key Features

  • Voltage Range: The 1N5809US operates at a working peak reverse voltage range, making it suitable for a variety of high-voltage applications.
  • Current Rating: With a forward current rating, this diode can handle significant power levels, making it ideal for power regulation and conversion tasks.
  • High Reliability: Manufactured with Microchip's stringent quality control processes, this diode is built for long-term reliability and stable operation.
  • Controlled Avalanche Characteristics: The diode is engineered to withstand transient over-voltage events, providing additional protection for sensitive electronic components.
  • Hermetically Sealed: The device is hermetically sealed, ensuring robust protection against moisture and contaminants, which is critical for harsh environment applications.
  • Low Thermal Resistance: The low thermal resistance of the 1N5809US facilitates efficient heat dissipation, contributing to its overall reliability and longevity.

Applications

The 1N5809US from Microchip Technology is an ideal choice for a wide range of high-reliability applications, including:

  • Power supply circuits
  • Voltage regulation modules
  • Protection circuits in aerospace and military systems
  • High-voltage instrumentation
  • Switching power supplies

Quality and Support

Microchip Technology is committed to providing customers with products that meet the highest standards of quality and reliability. The 1N5809US is no exception, backed by Microchip's global customer support and service network. With this product, users can expect a combination of performance and peace of mind, knowing they have a component that won't let them down when it matters most.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $20.3660 $61.0980
6+ $16.7106 $100.2636
10+ $16.1884 $161.8840
13+ $15.6662 $203.6606
17+ $15.1440 $257.4480
23+ $13.5774 $312.2802
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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