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MAVR-000082-0287FT

Part No MAVR-000082-0287FT
Manufacturer M/A-Com Technology Solutions
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Categories Uncategorized
Manufacturer M/A-Com Technology Solutions
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 829583-MAVR-000082-0287FT
Ultra Librarian 3D Model Ultra Librarian MAVR-000082-0287FT CAD Model

Description

The MAVR-000082-0287FT is a high-power GaN (Gallium Nitride) on SiC (Silicon Carbide) power amplifier manufactured by M/A-Com Technology Solutions. It's designed for a variety of applications requiring robust performance and high efficiency.

Applications:

  • Radar Systems: Particularly in pulsed radar applications where high peak power and efficiency are critical.
  • Communication Systems: Suitable for military and commercial communication bands needing reliable signal amplification.
  • Electronic Warfare: Can be used in jamming and countermeasure systems.
  • Test and Measurement Equipment: Employed in signal generators and power amplifiers for testing purposes.

Features:

  • High Output Power: Delivers significant RF power output for extended range and coverage.
  • GaN on SiC Technology: Provides superior thermal performance and efficiency compared to traditional silicon-based amplifiers.
  • Wideband Operation: Operates over a broad frequency range, offering flexibility in different applications.
  • Robust Design: Designed to withstand harsh operating conditions and maintain reliable performance.
  • High Efficiency: Minimizes power consumption and heat dissipation.

Benefits:

  • Extended Range: High output power increases the effective range of radar and communication systems.
  • Improved System Performance: GaN on SiC technology enhances overall system efficiency and reliability.
  • Reduced Size and Weight: Higher power density allows for smaller and lighter amplifier designs.
  • Lower Operating Costs: High efficiency minimizes power consumption, leading to reduced energy costs.
  • Enhanced Reliability: Robust design ensures consistent performance in demanding environments.

The MAVR-000082-0287FT typically operates within a specific frequency band. The GaN on SiC construction allows for operation at higher voltages and temperatures than traditional silicon devices. This results in improved power handling and efficiency. The device is usually packaged in a robust housing to facilitate heat dissipation and protect the internal components.

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