The KTN2907AS-RTK/H is a general-purpose PNP bipolar junction transistor (BJT) manufactured by KEC (Korea Electronics Co., Ltd.). It is designed for switching and amplification applications, complementary to the NPN KTN2222A transistor.

Applications

• General Purpose Amplification: Used in amplifiers for audio and small signal amplification.
• Switching Circuits: Functions as a switch in various electronic circuits.
• Driver Stages: Can be used to drive higher current loads.
• Complementary Circuits: Commonly paired with NPN transistors in push-pull amplifiers and other complementary circuits.
• Signal Processing: Employed in signal processing applications.

Features

• PNP Transistor: A PNP configuration, suitable for standard switching and amplification circuits, opposite polarity to NPN transistors.
• Low Saturation Voltage: Offers low saturation voltage for efficient switching.
• High Current Gain (hFE): Provides a good current amplification factor.
• Fast Switching Speed: Capable of fast switching speeds for high-frequency applications.
• Lead-Free Finish/RoHS Compliant: Environmentally friendly, adhering to RoHS standards.

Benefits

• Versatile Application: Suitable for a broad range of applications, reducing the need for multiple transistor types.
• Efficient Switching: Low saturation voltage contributes to energy-efficient operation.
• Reliable Performance: Provides consistent and reliable performance in various circuits.
• Ease of Use: Easy to integrate into existing circuit designs due to its common configuration.
• Environmentally Compliant: Meets environmental standards for lead content.
• Complementary Design: Can be used in complementary circuits with NPN transistors.

Specifications

The KTN2907AS-RTK/H typically features the following specifications (note: these may vary slightly depending on the exact datasheet version):

• Collector-Emitter Voltage (VCEO): -40V
• Collector-Base Voltage (VCBO): -60V
• Emitter-Base Voltage (VEBO): -5V
• Collector Current (IC): -600mA
• Power Dissipation (PD): 625mW
• DC Current Gain (hFE): Typically between 100 and 300 (depending on test conditions)
• Operating and Storage Temperature Range: -55°C to +150°C

The device is typically available in a TO-92 package.