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Same model may have multiple batches, images only for reference.
IXYT85N120A4HV Real Image
Same model may have multiple batches, images only for reference.

IXYT85N120A4HV

Part No IXYT85N120A4HV
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT GENX4 1200V 85A TO268HV / IGBT PT 1200 V 300 A 1150 W Surface Mount TO-268HV (IXYT)
Datasheet
IXYT85N120A4HV Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr IXYS
Package Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 300 A
Current - Collector Pulsed (Icm) 520 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 85A
Power - Max 1150 W
Switching Energy 4.9mJ (on) , 8.3mJ (off)
Input Type Standard
Gate Charge 200 nC
Td (on/off) @ 25°C 40ns/400ns
Test Condition 600V, 60A, 5Ohm, 15V
Reverse Recovery Time (trr) 40 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Supplier Device Package TO-268HV (IXYT)
Base Product Number IXYT85
Standard Package 30
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1351394-IXYT85N120A4HV
Ultra Librarian 3D Model Ultra Librarian IXYT85N120A4HV CAD Model

Description

The IXYT85N120A4HV is a single IGBT transistor from IXYS.

  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 300A
  • Package / Case: TO-268-3, D²Pak
  • Mounting Type: Surface Mount
  • Power - Max: 1150W
  • Switching Energy: 4.9mJ (On), 8.3mJ (Off)
  • Gate Charge: 200nC
  • Input Capacitance: Not Specified
  • Reverse Recovery Time (Trr): 40ns
  • ECCN: EAR99
  • REACH: Unaffected

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