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Same model may have multiple batches, images only for reference.
IXXN110N65C4H1 Real Image
Same model may have multiple batches, images only for reference.

IXXN110N65C4H1

Part No IXXN110N65C4H1
Manufacturer IXYS
Catalog IGBTs - Modules
Description IGBT MOD 650V 210A 750W SOT227B / IGBT Module PT Single 650 V 210 A 750 W Chassis Mount SOT-227B
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr IXYS
Series XPT™, GenX4™
Package Tube
IGBT Type PT
Configuration Single
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 210 A
Power - Max 750 W
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 110A
Current - Collector Cutoff (Max) 50 µA
Input Capacitance (Cies) @ Vce 3.69 nF @ 25 V
Input Standard
NTC Thermistor No
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Supplier Device Package SOT-227B
Base Product Number IXXN110
Standard Package 10
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
California Prop 65 Warning Information
Win Source Part Number 1351845-IXXN110N65C4H1
Ultra Librarian 3D Model Ultra Librarian IXXN110N65C4H1 CAD Model

Description

The IXXN110N65C4H1 is an IGBT transistor module from IXYS, designed for use in IGBT modules.

  • Voltage-Collector Emitter Breakdown (Max): 650V
  • Current-Collector Cutoff (Max): 50μA
  • Mounting Type: Chassis Mount
  • Package/Case: SOT-227-4, miniBLOC
  • Temperature Range: -55°C to 175°C (TJ)
  • Current-Collector (Ic) (Max): 210A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A
  • Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V

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