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IXTT90P10P

Name: IXTT90P10P
Brand: IXYS
SKU: 811032
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXTT90P10P
Manufacturer	IXYS
Catalog	FETs - Single
Description	MOSFET P-CH 100V 90A TO-268 / P-Channel Enhancement Mode
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	IXYS
Packaging	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) at 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	25mOhm at 45A, 10V
Vgs(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	120nC at 10V
Maximum Vgs	±20V
Input Capacitance (Ciss) (Maximum) at Vds	5800pF at 25V
Power Dissipation (Maximum)	462W (Tc)
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	SMD
Supplier Device Package	TO-268
Manufacturer Package	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Manufacturer Pack Quantity	30
MSL Level	1 (Unlimited)
Popularity	Medium
Supply and Demand Status	Limited
Win Source Part Number	811035-IXTT90P10P
Ultra Librarian 3D Model	Ultra Librarian IXTT90P10P CAD Model

Description

The IXTT90P10P is a MOSFET (Metal Oxide) from IXYS. This P-channel FET type component has a drain to source voltage (Vdss) of 100V and a power dissipation (maximum) of 462W (Tc). The supply and demand status is limited. The manufacturer pack quantity is 30 and the MSL level is 1 (unlimited).

FET Type: P-channel
Drain to Source Voltage (Vdss): 100V
Power Dissipation (Maximum): 462W (Tc)
Manufacturer Pack Quantity: 30
MSL Level: 1 (unlimited)

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