IXTT90P10P Real Image
Same model may have multiple batches, images only for reference.

Products specifications Report Issue?

Manufacturer IXYS
Packaging Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 25mOhm at 45A, 10V
Vgs(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 120nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5800pF at 25V
Power Dissipation (Maximum) 462W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-268
Manufacturer Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 811035-IXTT90P10P
Ultra Librarian 3D Model Ultra Librarian IXTT90P10P CAD Model

Description

The IXTT90P10P is a MOSFET (Metal Oxide) from IXYS. This P-channel FET type component has a drain to source voltage (Vdss) of 100V and a power dissipation (maximum) of 462W (Tc). The supply and demand status is limited. The manufacturer pack quantity is 30 and the MSL level is 1 (unlimited).

  • FET Type: P-channel
  • Drain to Source Voltage (Vdss): 100V
  • Power Dissipation (Maximum): 462W (Tc)
  • Manufacturer Pack Quantity: 30
  • MSL Level: 1 (unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $26.2962 $52.5924
5+ $21.5764 $107.8820
8+ $20.9021 $167.2168
10+ $20.2278 $202.2780
13+ $19.5536 $254.1968
18+ $17.5308 $315.5544
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 4,784 pieces
MOQ: 2 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?
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