IXTT30N60L2 Real Image
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 30A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 240mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 335nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 10700pF at 25V
Power Dissipation (Maximum) 540W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package TO-268
Manufacturer Package TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191299-IXTT30N60L2
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTT30N60L2 CAD Model

Description

The IXYS 516951 is an N-channel MOSFET transistor with a TO-268 package.

  • Package: TO-268
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 30A
  • Maximum Rds On: 240mOhm @ 15A, 10V
  • Gate-Source Voltage(th): 4.5V @ 250μA
  • Gate Charge (Qg): 335nC @ 10V
  • Input Capacitance (Ciss): 10700pF @ 25V
  • Drive Voltage: 10V
  • Operating Temperature: -55°C to 150°C
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Popularity: Popular
  • Supply and Demand: Balance

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