The IXYS IXTT1N450HV is an N-channel MOSFET with a drain-source breakdown voltage of 4500V and a continuous drain current of 1A.

• Rds On (Max): 85Ohm @ 50mA, 10V
• Gate-Source Voltage(th): 6.5V @ 250μA
• Gate Charge (Qg): 40nC @ 10V
• Input Capacitance (Ciss): 1730pF @ 25V
• Transistor Polarity: N-Channel
• Mounting Style: SMD
• Packaging: Tube
• Technology: MOSFET
• Supplier Device Package: TO-268
• Operating Temperature: -55°C to 150°C
• Manufacturer Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Power Dissipation: 520W
• Manufacturer Pack Quantity: 30
• MSL Level: 1 (Unlimited)