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Same model may have multiple batches, images only for reference.
IXTP1R4N120P
Same model may have multiple batches, images only for reference.

IXTP1R4N120P

Part No IXTP1R4N120P
Manufacturer IXYS
Catalog Transistors – FETs, MOSFETs – Single
Description MOSFET N-CH 1200V 1.4A TO220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 13Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 25 V
Power Dissipation (Max) 86W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Case / Package TO-220-3
Package Tube
Supply and Demand Status Shortage
Win Source Part Number 1495139-IXTP1R4N120P
Ultra Librarian 3D Model Ultra Librarian IXTP1R4N120P CAD Model

Description

N

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