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IXTP14N60P

Name: IXTP14N60P
Brand: IXYS
SKU: 608589
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IXTP14N60P
Manufacturer	IXYS
Catalog	FETs - Single
Description	PolarHVTM Power MOSFET \| MOSFET N-CH 600V 14A TO-220
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	IXYS
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	600V
Id - Continuous Drain Current	14A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	550mOhm at 7A, 10V
Gate Source Voltage(th) (Maximum) at Id	5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	36nC at 10V
Gate Source Voltage (Maximum)	±30V
Input Capacitance (Ciss) (Maximum) at Vds	2500pF at 25V
Power Dissipation (Maximum)	300W
Temperature Range - Operating	-55°C ~ 150°C
Mounting Style	Through Hole
Supplier Device Package	TO-220AB
Manufacturer Package	TO-220-3
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1191277-IXTP14N60P
Manufacturer Homepage	www.ixys.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IXTP14N60P CAD Model

Description

The IXYS IXTP14N60P is a N-channel MOSFET transistor with a maximum drain-source breakdown voltage of 600V and a continuous drain current of 14A.

Drain-Source Breakdown Voltage: 600V
Drain Current: 14A
On-Resistance: 550mOhm @ 7A and 10V gate-source voltage
Gate-Source Voltage Threshold: 5.5V @ 250μA
Gate-Source Voltage: ±30V
Input Capacitance: 2500pF @ 25V
Gate Charge: 36nC @ 10V
Power Dissipation: 300W
Package: TO-220AB
Category: discrete semiconductor products

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
100+	$0.5891	$58.9100
240+	$0.4828	$115.8720
375+	$0.4678	$175.4250
515+	$0.4528	$233.1920
660+	$0.4377	$288.8820
885+	$0.3927	$347.5395

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 8,000 pieces

MOQ: 100 pcs

Order Increment : 1 pcs

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