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IXTP120P065T

Part No IXTP120P065T
Manufacturer IXYS
Catalog FETs - Single
Description TrenchPTM Power MOSFETs P-Channel Enhancement Mode | MOSFET P-CH 65V 120A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 65V
Id - Continuous Drain Current 120A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 10mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 185nC at 10V
Gate Source Voltage (Maximum) ±15V
Input Capacitance (Ciss) (Maximum) at Vds 13200pF at 25V
Power Dissipation (Maximum) 298W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1191275-IXTP120P065T
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IXTP120P065T CAD Model

Description

The IXTP120P065T is a P-channel MOSFET manufactured by IXYS.

  • Package Type: TO-220AB
  • Maximum Power Dissipation: 298W
  • Drain-Source Breakdown Voltage: 65V
  • Continuous Drain Current: 120A
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Gate Charge: 185nC @ 10V
  • Input Capacitance: 13200pF @ 25V
  • Drive Voltage: 10V
  • Supply Status: Limited
  • Popularity Rating: Medium
  • Alternative Part: SUP90P06-09L-E3
  • Introduction By: IXYS
  • Manufacturer Homepage: www.ixys.com

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $7.3402 $51.3814
15+ $6.8757 $103.1355
23+ $6.6434 $152.7982
33+ $6.1788 $203.9004
43+ $5.9465 $255.6995
53+ $5.7142 $302.8526
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,500 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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