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IXTH72N20

Part No IXTH72N20
Manufacturer IXYS
Catalog FETs - Single
Description N-Channel Enhancement Mode | MOSFET N-CH 200V 72A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 72A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 33mOhm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 170nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 4400pF at 25V
Power Dissipation (Maximum) 400W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-247 (IXTH)
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1191262-IXTH72N20
Manufacturer Homepage www.ixys.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTH72N20 CAD Model

Description

The IXYS IXTH72N20 is a N-channel MOSFET transistor with a TO-247-3 package and a medium popularity.

  • Vds - Drain-Source Breakdown Voltage: 200V
  • Id - Continuous Drain Current: 72A
  • Rds On (Maximum) @ Id, Vgs: 33mOhm @ 500mA, 10V
  • Gate source voltage(th) (maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (maximum) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 4400pF @ 25V

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ €3.3230 €53.1682
39+ €2.7271 €106.3573
60+ €2.6415 €158.4891
83+ €2.5570 €212.2275
107+ €2.4713 €264.4325
144+ €2.2156 €319.0530
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,500 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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